Discontinuous Galerkin Solver for the Semiconductor Boltzmann Equation

We present preliminary results of a discontinuous Galerkin scheme applied to deterministic computations of the transients for the Boltzmann-Poisson system describing electron transport in semiconductor devices. The collisional term models optical-phonon interactions which become dominant under strong energetic conditions corresponding to nanoscale active regions under applied bias. The proposed numerical technique, that is a finite element method which uses discontinuous piecewise polynomials as basis functions, is applied for investigating the carrier transport in bulk silicon and in a silicon n+−n−n+ diode. Additionally, the obtained results are compared to those of a high order WENO scheme solver.